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The Optical and Electrical Properties of Boron Doped Zinc Oxide Prepared by Electrostatic Spray Deposition
Current Issue
Volume 3, 2016
Issue 4 (August)
Pages: 21-25   |   Vol. 3, No. 4, August 2016   |   Follow on         
Paper in PDF Downloads: 22   Since Aug. 6, 2016 Views: 1154   Since Aug. 6, 2016
Udeh Elizabeth, Research and Development Department, National Engineering Design Development Institute, Nnewi, Nigeria.
Uno E. O., Department of Physics, Federal University of Technology Minna, Nigeria.
Metu Chidiebere Sobechukwu, Research and Development Department, National Engineering Design Development Institute, Nnewi, Nigeria.
Olusunle S. O. O., Engineering Materials Development Institute, Akure, Nigeria.
Okwuego Emeka C., Manufacturing Services Department, National Engineering Design Development Institute, Nnewi, Nigeria.
The optical and electrical properties of boron doped zinc oxide prepared by electrostatic spray deposition were studied. This work is aimed at investigating the influence of doping concentration by optimizing boron doped zinc oxide concentrations. Boron doped zinc oxide with varying concentration (0wt%, 1.5wt%, 3wt%, 4.5wt% and 6.5wt%) were prepared and deposited at a temperature of 450°C on a glass substrate by electrostatic spray deposition. The optical and electrical properties of un-doped (ZnO) and doped (ZnO:B) films was investigated by UV spectrophotometer, four-probe technique. The thickness of the film was examined with profilometer. X-ray diffraction (XRD) analysis was carried to gain insight to the orientation of the thin film. The thickness examination gave a film thickness of 200nm for the un-doped zinc oxide and boron doped zinc oxide. The optical analysis indicated a decrease in transmittance from 0wt% to 3wt% which signifies that boron doped zinc oxide thin films were transparent and good absorber of light but at a high doping concentration it increases again. The band gap of the doped and un-doped zinc oxide, varied from 3.22 to 3.53 eV, with increasing doping concentration. The electrical resistivity decrease from 0wt% to 1.5wt% and later increases as the doping concentration increases. The optimised doping concentration is found at 1.5wt% with resistivity of 4.19 x 1010 (Ωcm), at 1.5wt% also give the maximum transmittance of 74.62%.which showed that incorporation of boric acid influenced the electrical properties. The XRD analysis of both ZnO and ZnO:B sick patterns indicate that the obtained ZnO and ZnO:B films are not crystalline.
Resistivity, Boron, Doped, Electrostatic
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