Influence of Local Phonon Modes in Wideband Matrix on Tunnel Current-Voltage Characteristics for Semiconductor Quantum Dots
One-dimensional dissipative quantum tunneling model has been proposed to interpret the experimental current-voltage characteristics of tunnel contact between atomic force microscope (AFM) probe and surface of InAs/GaAs(001) quantum dots studied in the tunneling AFM experiment on measuring local density of states. Within the framework of our approach of dilute instanton-antiinstanton gas, we made exact analytical calculation of tunneling probability rate for one charged particle weakly interacting with two local phonon modes in the wide-band matrix, which characterizes medium. The obtained theoretical result is in a good agreement with the experimental current-voltage characteristics. Namely, number, position, and heights of the observed peaks in the current-voltage characteristics of quantum dot devices based on a single-electron tunnel effect can be explained by the calculated effect of the wide-band matrix on the tunneling probability rate. This discovery enable possibility to set control over current-voltage characteristics of the semiconductor tunnel nanoelectronic devices.
Quantum Tunneling with Dissipation, Quantum Dots, Tunnel Current-Voltage Characteristics
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