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The Mobility of Electrons in a Quantum Wire with Edge Dislocation in a Magnetic Field
Current Issue
Volume 1, 2014
Issue 1 (September)
Pages: 17-21   |   Vol. 1, No. 1, September 2014   |   Follow on         
Paper in PDF Downloads: 29   Since Aug. 28, 2015 Views: 1585   Since Aug. 28, 2015
Authors
[1]
Vladimir Krevchik, Department of Physics, Penza State University, Penza, Russia.
[2]
Vladimir Kalinin, Department of Physics, Penza State University, Penza, Russia.
[3]
Eugene Kalinin, Department of General Physics, Penza State University, Penza, Russia.
Abstract
It is shown that the dependence of relaxation time for the kinetic energy of the incident electron on the edge dislocation is characterized by electron oscillations whose period decreases in a longitudinal magnetic field, and the relaxation time increases due to the hybrid quantization. It was found that the above mechanism of scattering may be significant in comparison with the scattering on LA-phonons and on the random rough boundary for quantum wire, while the temperature range of its effectiveness is determined by the occupation probability of acceptor centers in the dislocation line. The charge state of the dislocation line can significantly affect the width of the temperature range, where the scattering of electrons on the edge dislocation is dominated.
Keywords
Edge Dislocation, The Relaxation Time, The External Magnetic Field, Quantum Wire, The Electron Mobility
Reference
[1]
Poklonsky N.A. On the temperature dependence of the static conductivity of the semiconductor quantum wire in isolator./ N.A. Poklonsky, E.F. Kisliakof, S.A. Vyrko// FTP(Russian)–Physics and Technique of Semiconductors. - 2003 - V. 37 – N. 6 - P. 735.
[2]
Puvinskii M.A. The influence of the thickness fluctuations on the static conductivity of a semiconductor quantum wire./ M.A. Puvinskii, B.M. Puvinskii // FTP(Russian) – Physics and Technique of Semiconductors. - 2005 - V. 39 - N. 2 - P. 247.
[3]
Sinyavsky E.P. Features of the mobility for nanowires in the transverse electric and magnetic fields./ EP Sinyavsky, S. Karapetyan// FTP(Russian) – Physics and Technique of Semiconductors. – 2014. - V. 48. - N. 2 - P. 229.
[4]
Bert, N. Creation and study of the optical properties of quantum wires InGaAs/GaAs./ N.A Bert, S.A. Gurevich, L.G. Gladyshev, S.O. Kognovitsky, S.I. Kochanowski, I.V. Kotschnew, S.I. Nesterov, V.I.Skopina, V.B. Smirnickii, V.V. Herbalists, S.I. Troshkov, A.S. Usikov // FTP (Russian) – Physics and Technique of Semiconductors. - 1994 - V. 28. - N. 9 - P. 1605.
[5]
Krevchik V.D. The drag effect of one-dimensional electrons in the photoionization of D (-) - centers in the longitudinal magnetic field./ V.D. Krevchik, A.B. Grunin.// FTT(Russian) – Physics of Solid State. - 2003 - V. 45 - N. 7 - P. 1272.
[6]
Bonch-Bruevich V.L. On the theory of the electron plasma in semiconductors. / V.L. Bonch-Bruevich, S.M. Kogan // FTT Russian) – Physics of Solid State. - 1959 - Volume 1 - Issue. 8 - P. 1221.
[7]
Gradstein I.S. Tables of integrals, series and products / Gradshtein, I.M. Ryzhik. - M.: Fizmatgiz, 1962.
[8]
Prudnikov A.P. Integrals and Series (in 4 volumes) / A.P. Prudnikov, Y.U. Brychkov, O.I. Marichev.- M.: Fizmatlit, 2003.
[9]
Anselm A.I. Introduction to the theory of semiconductors./ A.I. Anselm. M., 1978, 616 p.
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