Characterizations of Spharelite ZnS:Sn Thin Film for Applications
[1]
Joseph Abiodun Amusan, Department of Physics, University of Port Harcourt, Port Harcourt, Nigeria.
[2]
Esijolomi Benjamin Otokunefor, Department of Physics, University of Port Harcourt, Port Harcourt, Nigeria.
The thermally evaporated ZnS thin film has been successfully grown and doped with Sn using vacuum evaporator. XRD spectra revealed cubic, Spharelite, ZnS (h k l) = (2 2 0) film doped with Sn at 2θ = 47.48°, lattice spacing, d = 1.91.The ZnS:Sn films roughness values of Ra = 17.34nm and Rq = 27.01nm are obtained from the film deposited at 100°C and at thickness of 500nm. SEM revealed densely packed, big grains, pin-hole free and the films uniformly covered the surface of glass substrates. The grain size is about 2µm. Zn, Sn and S with artefacts such as O2, Si, Mg, Ca and Na with their compositional percentages were identified by EDX. The energy bandgap of Spharelite ZnS:Sn film was found to be 3.80eV at 100°C with thickness 500nm. The average sheet resistance, Rs is 11.47 Ω and the average resistivity, ρ is found to be 1.833 x 10-3Ω-cm.
Sphalerite ZnS, Thermal Evaporator, Energy Bandgap, Optical Transmittance and X-Ray Diffraction
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