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Strain Effect on Transport Properties of Chiral Carbon Nanotube Nanodevice
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Volume 2, 2015
Issue 2 (March)
Pages: 6-11   |   Vol. 2, No. 2, March 2015   |   Follow on         
Paper in PDF Downloads: 62   Since Aug. 28, 2015 Views: 1757   Since Aug. 28, 2015
H. A. El-Demsisy, Faculty of Engineering, Benha University, Benha, Egypt.
M. D. Asham, Faculty of Engineering, Benha University, Benha, Egypt.
D. S. Louis, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
A. H. Phillips, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
The quantum transport properties of chiral single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated under the effect of tensile strain. This nanodevice is modeled as single walled carbon nanotube quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/ metal contact are controlled by the back gate. The electric current is deduced using Landauer-Buttiker formula. Results show that both energy gap and the electric current of the present nanodevice depend very sensitively on the chiral indices of SWCNT, its diameter and its chiral angles. Also, oscillatory behavior of the current is observed which is due to Coulomb blockade oscillations and Fano resonance. The present results are found to be in concordant with those in the literature, which confirm the correctness of the proposed model. This study is valuable for nanotechnology applications, e.g., soft and flexible nanoelectronics, nanoelectromechanical resonators and photodetectors.
SWCNT Quantum Dot, Strain Effect, Ac-field, Magnetic Field, Nanodevice
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