Coherent Manipulation of Spin Thermoelectric Dynamics in Graphene Nanodevice
[1]
Ahmed S. Abdelrazek, Faculty of Engineering, Kafr-Elsheikh University, Kafr-Elsheikh, Egypt.
[2]
Mohamed M. El-banna, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
[3]
Adel H. Phillips, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
A spin-thermoelectric effect in graphene nanodevice is investigated. This nanodevice is modeled as ferromagnetic graphene/ superconducting graphene junction with Schottky barrier of delta-type at the interface of the junction. The thermoelectric parameters are expressed in terms of spin-dependent Andreev reflection and normal reflection which will be deduced by solving Dirac-Bogoliubov-deGennes equation in one dimension. Numerical calculations are performed for two different superconducting layers under the effects of both frequency of the induced ac-field and under the effect of magnetic field. Results show that the present nanodevice operates only in narrow band of THz frequencies. Also, the present results might indicate that the present nanodevice is stable under the effect of magnetic field, which must be needed for quantum information processing. The present research is very important in the field of spin caloritronics on the nanoscale systems and at low temperatures.
Spin-caloritronics, Ferromagnetic Graphene, Superconducting Graphene, Thermopower (Seebeck Coefficient), Figure of Merit, Ac-field
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