Piezoelectric Effect on Spin Transport Characteristics of Ferromagnet/Semiconductor Junction
[1]
Ahmed S. Abdelrazek, Faculty of Engineering, Kafr-Elsheikh University, Kafr-Elsheikh, Egypt.
[2]
Mohamed M. El-banna, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
[3]
Adel H. Phillips, Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
The spin transport characteristics of junction consisting of ferromagnet/semiconducting curved nanowire are investigated. The semiconducting nanowire, in the present paper, is ZnO. For a curved ZnO nanowire, tensile strain and compressive strain occur at the outer and inner surfaces, respectively. So, ZnO produces piezotronic effects when it is strained. The aim of the present paper is to study the effect of strain on the spin transport characteristics, e.g., the conductance, spin polarization and giant magnetoresistance. This can be achieved by using the effective mass approximation method and Floquet theory. Spin-orbit coupling, the effect of ac-field and magnetic field are taken into consideration. Results show that the spin transport characteristics are highly sensitive to strain mainly due to the change in Schottky barrier height. This change in Schottky barrier height is owing to the strain induced band structure change and piezoelectric effect. The present results show that this investigation is very important and the junction studied could be fabricated for tips of scanning tunneling microscopy for sensing strain in nanostructured materials.
Nanomagnetics, Spintronics, Nanomaterials, ZnO Nanowire, Piezotronics
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